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Precursor

Semiconductor precursor

  • Product Details
    NO. Product Chemical Name Purity
    1 TEOS TeTraethylorthosilicate 4N, 7N
    2 TrisDMAS Tris(Dimethylamino) Silane 6N
  • Common product information
    Common product information
    Gas Name Chemical Formula Purity Main Process Application Features / Remarks
    Hydrogen chloride (HCl) HCL 5N Etching process Wafer surface contaminant removal
    Chlorine Cl₂ 5N Metal etching (Al, W, etc.) Strong etching capability
    Fluorine F₂ 5N High-speed metal etching Highly toxic and explosive
    NF₃ NF₃ 4N CVD chamber cleaning process Generation of F after plasma dissociation
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